Diffracting, aperiodic targets for overlay metrology and...

Optics: measuring and testing – By alignment in lateral direction – With registration indicia

Reexamination Certificate

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Reexamination Certificate

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10858691

ABSTRACT:
A method for measuring overlay in semiconductor wafers includes a calibration phase in which a series of calibration samples are analyzed. Each calibration sample has an overlay that is known to be less than a predetermined limit. A difference spectrum for a pair of reflectively symmetric overlay targets is obtained for each calibration sample. The difference spectra are then combined to define a gross overlay indicator. In subsequent measurements of actual wafers, difference spectra are compared to the overlay indicator to detect cases of gross overlay.

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