Differing field oxide thicknesses in dynamic memory device

Details Differing field oxide thicknesses in dynamic memory device Differing field oxide thicknesses in dynamic memory device

1982-04-13

1986-03-11

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 148187, 148DIG82, 357 51, 357 52, 357 91, H01L 2122, H01L 21265

Patent

active

045744653

ABSTRACT:
A dynamic read/write memory device using one-transistor N-channel silicon gate type cells is made by a double-level polysilicon process in which the field oxide is of reduced thickness for the cell array, and of conventional thickness for peripheral circuits. This reduces moat encroachment in the critical cell portion, yet does not force performance compromises in the critical speed paths.

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patent: 4335502 (1982-06-01), Richman
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patent: 4384895 (1983-05-01), Kuo
patent: 4391032 (1983-07-01), Schulte
patent: 4434543 (1984-03-01), Schwabe et al.
patent: 4435895 (1984-03-01), Parrillo et al.

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