Differentially magnetically sensitive diode structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 4306

Patent

active

049822543

ABSTRACT:
A three terminal differentially sensitive magnetic diode structure is described. It offers high magnetic sensitivity and utilizes the Lorentz field potential modulation of injected carriers at the emitter. Two base contacts separated from the emitter are employed to derive a signal from the modulation of emitter injection in the presence of a magnetic field.

REFERENCES:
patent: 3305790 (1967-02-01), Parsons et al.
patent: 4654684 (1987-03-01), Vinal

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Differentially magnetically sensitive diode structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Differentially magnetically sensitive diode structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Differentially magnetically sensitive diode structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2000262

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.