Differential treatment to selectively avoid silicide formation o

Details Differential treatment to selectively avoid silicide formation o Differential treatment to selectively avoid silicide formation o

1999-11-23

1995-05-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 56, 437 58, 437 24, 437 44, 257360, H01L 2144, H01L 2148

Patent

active

054139694

ABSTRACT:
Selective salicidation of source/drain regions of a transistor is accomplished by differentially treating a first subset of the source/drain regions to hinder formation of metal-silicide over the first subset of the source/drain regions. A metal layer is formed over the first subset of the source/drain regions and a second subset of the source/drain regions. The metal layer is annealed at a temperature such that the metal reacts to form metal-silicide over the second subset of the source/drain regions, but not over the first subset of the source/drain regions. The unreacted metal is stripped off over the first subset of the source/drain regions. In the preferred embodiment of the present invention, a second anneal is then performed to fully form metal-silicide over the second subset of the source/drain regions.

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