Differential temperature control in chemical mechanical polishin

Details Differential temperature control in chemical mechanical polishin Differential temperature control in chemical mechanical polishin

1998-09-10

2000-11-21

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438690, 438691, H01L 21302

Patent

active

061502715

ABSTRACT:
The specification describes a method and apparatus for chemical-mechanical polishing (CMP) to produce planar layered semiconductor structures. Non-uniformities in polishing behavior due to radial temperature variations across the semiconductor wafer are compensated by locally controlling the temperature of the wafer. Heating/cooling is implemented by installing temperature controlling coils in the head of the wafer carrier.

REFERENCES:
patent: 6020262 (1998-03-01), Wise et al.
Wolf, silicon Processing for the VLSI Era: vol. 2 Process Integration, Lattice Press, p. 227, 238-239, 1990.

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