Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-09-12
2006-09-12
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S686000, C257S690000, C257S620000, C257S621000, C257S758000, C257SE21583, C257SE21580
Reexamination Certificate
active
07105925
ABSTRACT:
Method and structure for optimizing and controlling chemical mechanical planarization are disclosed. Embodiments of the invention include planarization techniques to make nonplanar surfaces comprising alternating metal and intermetal layers. Relative protrusion dimensions and uniformity of various layers may be accurately controlled using the disclosed techniques.
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International Search Report PCT/US 03/39192.
Boardman James A.
Fischer Paul B.
Kim Sarah E.
Kobrinsky Mauro J.
Anya Igwe U.
Baumeister B. William
Intel Corporation
Plimier Michael D.
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