Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-07-05
2005-07-05
Wilson, Christian (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000
Reexamination Certificate
active
06914002
ABSTRACT:
Method and structure for optimizing and controlling chemical mechanical planarization are disclosed. Embodiments of the invention include planarization techniques to make nonplanar surfaces comprising alternating metal and intermetal layers. Relative protrusion dimensions and uniformity of various layers may be accurately controlled using the disclosed techniques.
REFERENCES:
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 6194313 (2001-02-01), Singh et al.
patent: 6281114 (2001-08-01), Lin et al.
patent: 6352928 (2002-03-01), Tsutsui
patent: 6375694 (2002-04-01), Roberts et al.
patent: 6391768 (2002-05-01), Lee et al.
patent: 6492274 (2002-12-01), Pryor
patent: 6530968 (2003-03-01), Tsuchiya et al.
patent: 2003/0211815 (2003-11-01), Carter et al.
Boardman James A.
Fischer Paul B.
Kim Sarah E.
Kobrinsky Mauro J.
Intel Corporation
Plimier Michael D.
Wilson Christian
LandOfFree
Differential planarization does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Differential planarization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Differential planarization will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3383640