Differential non-volatile content addressable memory cell...

Static information storage and retrieval – Associative memories – Ferroelectric cell

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S175000

Reexamination Certificate

active

07050316

ABSTRACT:
A differential sensing content addressable memory cell without any word lines connected to the cells in the same row comprises a first bit line for supplying a first bit. A first storage element has a first phase change resistor for storing a first stored bit, which is connected in series with a first diode. The first storage element is connected to the first bit line. A second bit line supplies a second bit, with the second bit being an inverse of the first bit. A second storage element has a second phase change resistor for storing a second stored bit, which is connected in series with a second diode. The second storage element is connected to the second bit line. A match line is connected to the first and second storage elements for indicating whether a match occurred between the first bit and the first stored bit, and between the second bit and the second stored bit

REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 5930161 (1999-07-01), Sheikholeslami et al.
patent: 5949696 (1999-09-01), Threewitt
patent: 6411538 (2002-06-01), Kengeri
patent: 6452823 (2002-09-01), Naji
patent: 6639818 (2003-10-01), Nojima
patent: 6751110 (2004-06-01), Hu

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Differential non-volatile content addressable memory cell... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Differential non-volatile content addressable memory cell..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Differential non-volatile content addressable memory cell... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3528382

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.