Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-03-29
2011-03-29
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185210, C365S185180, C365S185270, C365S189110
Reexamination Certificate
active
07916539
ABSTRACT:
Memory embodiments are provided to operate in memory systems which are configured to have a system ground and a system substrate that are biased at different voltages. At least one of these embodiments includes a memory cell and write and read circuits in which the memory cell is coupled to the system substrate and the write and read circuits are coupled to the system ground. The memory cell preferably has a cross-coupled pair of transistors which can be set in first and second states. The write circuit is arranged and level shifted to drive the cross-coupled pair into either selected one of the states and the read circuit is arranged and level shifted to provide a data signal indicative of the selected state.
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Analog Devices Inc.
Graham Kretelia
Ho Hoai V
Koppel, Patrick, Heybl & Dawson
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