Differential etching of silicon nitride

Details Differential etching of silicon nitride Differential etching of silicon nitride

1989-05-30

1990-09-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437985, 437228, H01L 21311, H01L 21311.5

Patent

active

049563149

ABSTRACT:
A method for differentially etching silicon nitride, preferably formed in a hydrogen free environment, wherein hydrogen is implanted into various regions of the silicon nitride. The silicon nitride may then be etched by a number of different etchants, some of which will etch the implanted regions appreciably faster and others which will etch the non-implanted regions more quickly. This method is especially useful in the fabrication of self-aligned gate devices.

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patent: 4863556 (1989-09-01), Reichert
patent: 4863879 (1989-09-01), Kwok
"VLSI Fabrication Principles", Ghandhi, 1983, pp. 427-428, pp. 495-496.
"Hydrogen-Implanted Silicon Nitride", Stein; J. Electrochem. Soc., vol. 129, No. 8; pp. 1786-1791.
"Hydrogen-Implanted Silicon Nitride and Silicon Oxynitride Films"; Schalch et al., Physica Status Solidi.sup.A ; vol. 105; pp. K81-K86.
"IBM Technical Disclosure Bulletin"; vol. 24 No. 11B; 4/82; Kinkel et al. pp. 6094.
"Method for Etching a Silicon Nitride Film", Kinoshita et al., Japanese Kokai Patent No. 58/701428 (translation).

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