Differential amplifier using N-channel insulated-gate field-effe

Details Differential amplifier using N-channel insulated-gate field-effe Differential amplifier using N-channel insulated-gate field-effe

1987-03-19

1988-05-24

LaRoche, Eugene R.

Amplifiers

With semiconductor amplifying device

Including differential amplifier

330277, H03F 345, H03F 316

Patent

active

047468750

ABSTRACT:
For the purpose of achieving a small as possible distortion factor in the case of high-frequency input signals, the load resistors in this differential amplifier are designed as depletion resistors (DEPRs) of the type known per se. Likewise, in the common source circuit, there is provided the further DEPR, with the two transistors thereof having the same width-to-length ratios. Moreover, each of the amplifier transistors has a constant-current transistor of its own which, together with both the transistor and the DEPR, as well as the transistor which is connected as a diode, form the constant-current circuit. The respective width-to-length ratios of the transistors of the DEPRs differ from one another.

REFERENCES:
patent: 3970951 (1976-07-01), Hoffman
patent: 4563654 (1986-01-01), Arai et al.
IEEE Journal of Solid-State Circuits, vol. SC-19, "A Linear NMOS Depletion Resistor and Its Application in an Integrated Amplifier", J. N. Babanezhad, pp. 932-938.

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