Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-08-28
1998-12-08
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, 257347, 257351, H01L 2904
Patent
active
058474137
ABSTRACT:
By forming a gate electrode, a source electrode and a drain electrode so as to assume concentric circles on an active layer made of, for instance, a crystalline silicon thin film, it is prevented that an edge of the active layer is located on a line connecting the source and drain electrodes. This configuration prevents the source and drain electrodes from being short-circuited by the gate electrode, resulting in reduction of a leak current. Specifically, a channel region may surround one the source and drain region while the other of the source and drain region surrounds the channel region. Alternatively, the gate electrode may surround one the source and drain region while the other of the source and drain region surrounds the channel region.
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C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon"(3 pages), J. Appl. Phys. 73 (12), 1993.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communication, vol. 85, No. 11, pp. 921-924, 1993.
R. Kakkad et al., "Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon," J. Appl. Phys., 65(5), Mar. 1, 1989, pp. 2069-2072.
G. Liu et al., "Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing," Appl. Phys. Lett. 62(20), May 17, 1993, pp. 2554-2556.
G. Liu et al., "Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing," Appl. Phys. Lett. 55(7), Aug. 14, 1989, pp. 660-662.
R. Kakkad et al., "Low Temperature Selective Crystallization of Amorphous Silicon," Journal of Non-Crystalline Solids, 115, 1989, pp. 66-68.
Koyama Jun
Ogata Yasushi
Yamazaki Shunpei
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh-Loan
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