Dielectrically isolated transducer employing single crystal stra

Details Dielectrically isolated transducer employing single crystal stra Dielectrically isolated transducer employing single crystal stra

1981-08-31

1984-06-26

Albritton, C. L.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

338 5, 357 26, G01L 122

Patent

active

044569017

ABSTRACT:
A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top of the wafer to enable the etching or formation of a desired gage pattern.

REFERENCES:
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4317126 (1982-02-01), Gragg, Jr.

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