Dielectrically isolated transducer employing single crystal stra

Details Dielectrically isolated transducer employing single crystal stra Dielectrically isolated transducer employing single crystal stra

1983-11-21

1985-04-16

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29610SG, 29576B, 338 4, 338 5, 357 26, 357 91, 148DIG159, H01L 2984, G01L 122

Patent

active

045106711

ABSTRACT:
A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top surface of the wafer to enable the etching or formation of a desired gage pattern.

REFERENCES:
patent: 3800264 (1974-03-01), Kurtz et al.
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4188258 (1980-02-01), Mounteer et al.
patent: 4317126 (1982-02-01), Gragg, Jr.
Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO.sub.2 & Si.sub.3 N.sub.4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon, Maeyama S.; Kajiyama K., Jpn. J. Appl. Phys., vol. 21, No. 5, May 1982, pp. 744-751.
C.M.O.S. Devices Fabricated on Buried SiO.sub.2 Layers Formed by Oxygen Implantation into Silicon, Izumi, K.; Doken, M.; Ariyoshi, H., Electron Lett., Aug. 1978, vol. 14, No. 18.
Multiple SOI Structure Fabricated by High Dose Oxygen Implantation and Epitaxial Growth, Irita, Y.; Kuni, Y.; Takahashi, M.; Kajiyama, K., Jpn. J. Appl. Phys., vol. 20, No. 12, Dec. 1981, pp. L909-L912.

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