Dielectrically isolated substrate and a process for producing th

Details Dielectrically isolated substrate and a process for producing th Dielectrically isolated substrate and a process for producing th

1993-03-02

1994-08-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 67, 437 62, 437 64, 437974, 148DIG50, 148DIG12, H01L 2176

Patent

active

053366344

ABSTRACT:
A dielectrically isolated substrate is comprised of a single-crystal silicon substrate or bond substrate and a single-crystal silicon substrate or base substrate bonded together into a composite structure. The bond substrate has a (110) plane as a main crystal plane and is provided with vertically walled moats and substantially squared islands positioned adjacent to the moats. The moats and islands result from anisotropic etching using a specific mask pattern. Also disclosed is a process for producing the composite structure.

REFERENCES:
patent: 3780426 (1973-12-01), Ono et al.
patent: 4131910 (1978-12-01), Hartman et al.
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4238762 (1980-12-01), McWilliams et al.
patent: 4878957 (1989-11-01), Yamaguchi et al.
patent: 4984052 (1991-01-01), Koshino et al.

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