Dielectrically isolated structure for use in soi-type semiconduc

Details Dielectrically isolated structure for use in soi-type semiconduc Dielectrically isolated structure for use in soi-type semiconduc

1990-10-12

1992-06-30

Hille, Rolf

357 47, 357 50, 357 55, H01L 2712, H01L 2702, H01L 2704, H01L 2906

Patent

active

051268175

ABSTRACT:
A dielectrically isolated structure for use in an SOI-type semiconductor device according to the present invention comprises a substrate having an element-forming region formed therein on a first insulating film, the region being made of a first material, at least one trench formed in the element-forming region and extending to the first insulating film, second insulating films formed on side walls of the trench, and a film made of a second material, and embedded in only an upper portion of the trench such that a bottom portion of the trench is hollow.

REFERENCES:
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4984052 (1991-01-01), Koshino et al.

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