Dielectrically isolated semiconductor devices

Details Dielectrically isolated semiconductor devices Dielectrically isolated semiconductor devices

1983-01-24

1985-02-26

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29 2W, 29576J, 29580, 29585, 65 40, 65 593, 148175, 156272, 1562739, 204 16, 357 49, 357 73, H01L 21306, H01L 2176

Patent

active

045010609

ABSTRACT:
Dielectrically isolated single crystal silicon of high quality is produced by an extremely convenient process. This process involves the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide. The bodies are contacted so that the silicon oxide is at an interface between the two bodies. The bodies are then heated to an elevated temperature while applying a nominal electrical potential across the interface. This combination of applied potential and temperature permanently fuses the two bodies without producing any significant damage to the crystal quality of these bodies.

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Brooks et al., "Low-Temperature Electrostatic Silicon-to-Silicon . . . ", J. Electrochem. Soc., vol. 119, No. 4, Apr. 1972, pp. 545-546.
"Field Assisted Glass Sealing," Electrocomponent Science and Technology, 2(1), 45-53 (1975), George Wallis.
Electrochemical Society Reviews and News, 117(11), 405C, Abstract 239 RNP, "Thin High-Quality Silicon Layers on Insulating Substrates," George Wallis et al.

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