Dielectrically isolated Schottky Barrier structure and method of

Coating processes – Electrical product produced – Condenser or capacitor

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427 89, 427 90, 427 93, 427 94, 427125, 427399, 156 17, 357 15, H01L 502, B05D 512

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039565270

ABSTRACT:
A planar integrated circuit structure having a dielectrically isolated Schottky Barrier contact.
The structure has pockets of silicon surrounded by isolating regions of silicon dioxide extending from a planar surface, the silicon dioxide regions and silicon pockets being substantially coplanar at said surface. A layer of dielectric material, such as silicon nitride or a composite of silicon nitride over silicon dioxide, covers the surface. There is at least one opening extending through the dielectric layer to a coincident silicon pocket; the opening has larger lateral dimensions than said pocket so as to expose the pocket and a portion of the silicon dioxide region surrounding the pocket. A metallic layer in this opening forms a Schottky Barrier contact with the exposed silicon.

REFERENCES:
patent: 3585469 (1971-06-01), Jager
patent: 3675313 (1972-07-01), Driver
patent: 3742315 (1973-06-01), Iizuka
patent: 3746950 (1973-07-01), Kano
patent: 3753774 (1973-08-01), Veloric
patent: 3755001 (1973-08-01), Kooi
patent: 3764865 (1973-10-01), Napoli
patent: 3770606 (1973-11-01), Lepselter

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