Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-08-27
1999-01-05
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257347, H01L 2712
Patent
active
058567011
ABSTRACT:
Semiconductor device chips having a first layer of semiconductor material, a second layer of a semiconductor material and an insulating layer disposed therebetween. The first layer of semiconductor material has doped semiconductor regions disposed therein, and the second layer of semiconductor material has a power device disposed therein. The power device is disposed beneath the doped semiconductor region of the first layer. Trenches may be located within the first layer of semiconductor material to electrically isolate different areas having doped semiconductor regions. The insulating layer is typically formed from an oxide.
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Hardy David B.
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