Dielectrically isolated power IC

Details Dielectrically isolated power IC Dielectrically isolated power IC

1996-08-27

1998-06-16

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257501, 257524, H01L 29784

Patent

active

057675627

ABSTRACT:
A power IC having at least a level shifter for changing the level of an input signal, a high-side driver circuit for driving a predetermined load in accordance with a level changed by the level shifter, the high-side driver circuit being in a floating state, and a reverse current preventing diode for disconnecting a current path from the ground of the level shifter to the reference potential of the high-side driver circuit. The high-side driver circuit and reverse current preventing diode are respectively dielectrically isolated by a dielectric member to prevent insufficient element isolation to be caused by bias conditions. The predetermined reference potential to be connected to an inductive load or the like in the high-side driver circuit can be set to a negative potential. The electrical energy stored in the inductive load or the like can be extracted out and attenuated at high speed via the reference potential set to the negative potential to thereby realize a high speed operation.

REFERENCES:
patent: 4935800 (1990-06-01), Taguchi
patent: 5491358 (1996-02-01), Miyata
patent: 5512777 (1996-04-01), Endo

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