Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2007-10-02
2010-12-28
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S046000, C438S047000, C257SE21108
Reexamination Certificate
active
07858417
ABSTRACT:
A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.
REFERENCES:
patent: 5719891 (1998-02-01), Jewell
patent: 5724374 (1998-03-01), Jewell
patent: 5985683 (1999-11-01), Jewell
patent: 6014395 (2000-01-01), Jewell
patent: 6233267 (2001-05-01), Nurmikko
patent: 6888873 (2005-05-01), Kwon
Park Gyoungwon
Ryou Jae-Hyun
Finisar Corporation
Trinh Michael
Workman Nydegger
LandOfFree
Dielectric VCSEL gain guide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dielectric VCSEL gain guide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric VCSEL gain guide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4227292