Dielectric thin films from fluorinated precursors

Details Dielectric thin films from fluorinated precursors Dielectric thin films from fluorinated precursors

2006-03-07

2006-03-07

Harlan, Robert D. (Department: 1713)

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

Polymers from only ethylenic monomers or processes of...

C526S251000, C428S001100, C428S421000, C428S500000

Reexamination Certificate

active

07009016

ABSTRACT:
New precursors and processes are disclosed for making fluorinated, low dielectric constant ∈ thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future <0.13 μm integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

REFERENCES:
patent: 3268599 (1966-08-01), Chow
patent: 3274267 (1966-09-01), Chow
patent: 3280202 (1966-10-01), Gilch
patent: 3288728 (1966-11-01), Gorham
patent: 3332891 (1967-07-01), Chow et al.
patent: 3342754 (1967-09-01), Gorham
patent: 3349045 (1967-10-01), Gilch
patent: 3379803 (1968-04-01), Tittmann et al.
patent: 3503903 (1970-03-01), Shaw et al.
patent: 3509075 (1970-04-01), Niegisch et al.
patent: 3626032 (1971-12-01), Norris
patent: 3694495 (1972-09-01), Norris
patent: 3940530 (1976-02-01), Loeb et al.
patent: 5268202 (1993-12-01), You et al.
patent: 5538758 (1996-07-01), Beach et al.
patent: 5879808 (1999-03-01), Wary et al.
patent: 5883144 (1999-03-01), Bambara et al.
patent: 5958510 (1999-09-01), Sivaramakrishnam et al.
patent: 6130171 (2000-10-01), Gomi
patent: 6140456 (2000-10-01), Lee et al.
patent: 6265320 (2001-07-01), Shi et al.
patent: 6703462 (2004-03-01), Lee
patent: 6797343 (2004-09-01), Lee
patent: 2003/0143341 (2003-07-01), Lee
patent: 0349032 (1990-01-01), None
patent: 0523479 (1993-01-01), None
patent: 0856503 (1998-09-01), None
patent: 650947 (1951-03-01), None
patent: 673651 (1952-06-01), None
patent: WO 97/15699 (1997-05-01), None
patent: WO 97/15951 (1997-05-01), None
patent: WO 97/42356 (1997-11-01), None
patent: WO 99/21705 (1999-05-01), None
patent: WO 99/21706 (1999-05-01), None
patent: WO 99/21924 (1999-05-01), None
Morgen et al.,Morphological Transitions in Fluorinated and Non-Fluorinated Parylenes, Material Research Society Symposium Proceedings, vol. 565, pp. 297-302, 1999.
Peng and McGivern,Quantum Yields and Energy Partitioning in the UV Photodissociation of Halon 2402, Journal of Chemical Physics, vol. 113, No. 17, pp. 7149-7157, 2000.
Brun,100nm: The Undiscovered Country, Semiconductor International, p. 79, Feb. 2000.
Rashed,Properties and Characteristics of Silicon Carbide, website publication (www.poco.com), POCO Graphite Inc., 2002.
Chow et al.,Poly(a,a,a',a'-tetrafluoro-p-xylylene),Journal of Applied Polymer Science, vol. 13, No. 9, pp. 2325-2332, 1969.
Chow et al.,The Synthests of 1,1,2,2,9,9,10,10-octafluorou2, 2Paracyclophane, Journal of Organic Chemistry, vol. 35, No. 1, pp. 20-22, 1970.
Iwamoto et al.,Crystal Structure of Poly-p-xylylene. I. The a Form, Jour. Polymer. Sci. Polymer. Phys. Ed., vol. 11, pp. 2403-2411, 1973.
Iwamoto et al.,Crystallization During Polymerization of Poly-p-xylene. III. Crystal Sturcture and Molecular Orientation as a Function of Temperature, Journal of Polymer Science Polymer, Phys. Ed., vol. 13, pp. 1925-1938, 1975.
Lee,Transport Polymerization of Gaseous Intermediates and Polymer Crystal Growth, J. Marcromol. Sci. Rev. Micromol. Chem., C16(1), p. 79-127, 1977-78.
Sharma et al.,Optimizing Poly(chloro-p-Xylelene)or Parylene C Synthesis, Journal of Applied Science, vol. 36, No. 7, pp. 1555-1565, Sep. 20, 1988.
Lee,Polyimides, Polyquinolines and Polyquinoxalines: Tg-Structure Relationships, Journal of Macromolecular Science, Part C-Polymer Reviews(formerlyJournal of Macromolecular Science, Part C-Reviews in Macromolecular Chemistry and Physics) vol. 29(4), pp. 431-560, 1989.
Lang,Vapor Deposition of Very low k Polymer Films, Poly(Naphthalene),Poly(Fluorinated Naphthalene),Materials Research Society Symposium Proceedings, vol. 381, pp. 45-50, Apr. 17, 1995.
Wary et al.,Polymer Developed to be Interlayer Dielectric, Semi-Conductor International, pp. 211-216, Jun. 1996.
Ryan et al.,Effect of Deposition and Annealing on the Thermomechanical Properties of Parylene Films, Material Research Society Symposium Proceedings, vol. 476, pp. 225-230, 1997.
Greiner,Poly(1,4-xylylene)s: Polymer Films by Chemical Vapour Deposition, Trends in Polymer Science, vol. 5, No. 1, pp. 12-16, 1997.
Harrus et al.,Parylene Af-4: A Low eRMaterial Candidate for ULSI Multilevel Interconnect Applications, Material Research Society Symposium Proceedings, vol. 443, 1997.
Plano et al.,The Effect of Deposition Conditions on the Properties of Vapor-Deposited Parylene Af-4 Films, Material Research Society Symposium Proceedings, vol. 476, pp. 213-218, 1997.
Yang et al.,High Deposition Rate Parylene Films, Journal of Crystal Growth, North Holland Publishing Co., Amsterdam, NL, vol. 183, No. 3, pp. 385-390, 1998.
Riedel,Electro-less Nickel Plating 2ndEdition, ASM International Finishing Publication Ltd., 1998.
Mathur et al.,Vapor Deposition of Parylene-F Using Hydrogen as Carrier Gas, Journal of Materials Research, vol. 14, No. 1, pp. 246-250, 1999.
Peng and McGivern,Quantum Yields and Energy Partitioning In the UV Photodissociation of Halon 2402, Journal of Chemical Physics, vol. 113, No. 17, pp. 7149-7157, 2000.
Brun,100nm: The Undiscovered Country, Semiconductor International, p. 79, Feb. 2000.

Affiliated with

Also associated with

Rating

Dielectric thin films from fluorinated precursors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric thin films from fluorinated precursors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric thin films from fluorinated precursors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3582028