Dielectric thin film capacitor element

Details Dielectric thin film capacitor element Dielectric thin film capacitor element

1997-06-06

1999-05-25

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361313, 3613215, 361322, 257295, H01G 406

Patent

active

059074701

ABSTRACT:
The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

REFERENCES:
patent: 5453908 (1995-09-01), Tsu et al.
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5548475 (1996-08-01), Ushikubo et al.
patent: 5578845 (1996-11-01), Masuda et al.
patent: 5635741 (1997-06-01), Tsu et al.
patent: 5734545 (1998-03-01), Sano et al.
"Stabilized Barium Titanate Ceramics for Capacitor Dielectrics", by J.B. MacChesney et al., Journal of the American Ceramic Society, May 21, 1963, vol. 46, No. 5, pp. 197-202.
"dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics" by R. Waser, Journal of the American Ceramic Society, vol. 73, No. 6, 1990 pp. 1645-1653.

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