Dielectric thin film, and method for making the thin film

Details Dielectric thin film, and method for making the thin film Dielectric thin film, and method for making the thin film

1986-05-23

1989-12-19

Nguyen, Nam X.

Stock material or miscellaneous articles

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Of quartz or glass

20419215, 20419222, 428433, 428698, B32B 1500, C23C 1434

Patent

active

048882461

ABSTRACT:
A dielectric thin film element comprising a dielectric substrate and a dielectric thin film formed on the substrate. The thin film is made of a perovskite type oxide and formed by sputtering in an atmosphere containing nitrogen, by which the dielectric constant and the breakdown electric field strength are greatly improved. Thin film devices using the film and a method for making the thin film are also described.

REFERENCES:
patent: 3627662 (1971-12-01), Feuersanger et al.
patent: 3819990 (1974-06-01), Hayashi et al.
Iida et al., "BaTiO.sub.3 . . . or GaAs", Applied Physics Letters, vol. 18, No. 9, May/1971, pp. 391-392.
Pratt et al., "Fabrication . . . Films", The Jr. of Vac. Sci. and Techn., vol. 8, No. 1, Jan.-Feb./1971, pp. 256-260.
Shintani et al., "Preparation . . . Sputtering", Jr. of Applied Physics, vol. 41, No. 6, 5/70, pp. 2376-2380.

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