Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-04-15
1996-05-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257209, 257529, H01L 2904, H01L 2710, H01L 2900
Patent
active
055214231
ABSTRACT:
An antifuse element suitable for use in FPGA. When a device is miniaturized to reduce the write voltage in an antifuse element and as the film thickness of the antifuse dielectric film is being reduced, the dielectric breakdown voltage is greatly variable due to the irregularity of the underlying metal. If the dielectric film is formed by a metal oxide having a relatively high specific permitivity without changing its parasitic capacity as compared to the prior art, the film thickness of the dielectric film can be increased in comparison with oxide and nitride films formed according to the prior art. The irregularity of the underlying metal can be reduced by coating it with a metal nitride or TiB film or TiC film. To equalize the dielectric breakdown voltage, another insulation film having a film thickness such that the direct tunnel conduction is dominant is formed below the metal oxide. To reduce the irregularity of the metal surface and to reduce the resistance after dielectric breakdown, an amorphous silicon layer is deposited before the metal oxide is deposited thereover to form a laminated film.
REFERENCES:
patent: 4488262 (1984-12-01), Basire et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5166556 (1992-11-01), Hsu et al.
David K. Y. Liu, et al. "Scaled Dielectric Antifuse Structure for Field-Programmable Gate Array Applications," IEEE Electron Device Letters, vol. 12, No. 4, Apr. 1991.
Simon S. Cohen, et al. "A Novel Double-Metal Structure for Voltage-Programmable Links," IEEE Electron Device Letters, vol. 13, No. 9, Sep. 1992.
Kaizuka Takeshi
Ohta Tomohiro
Shinriki Hiroshi
Crane Sara W.
Kawasaki Steel Corporation
Martin Wallace Valencia
LandOfFree
Dielectric structure for anti-fuse programming element does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dielectric structure for anti-fuse programming element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric structure for anti-fuse programming element will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-788943