Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-11-08
2005-11-08
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000
Reexamination Certificate
active
06963138
ABSTRACT:
An integrated circuit with a pressure resistant current carrying structure having electrically conductive layers for carrying current. A first electrically nonconductive material at least partially surrounds the electrically conductive layers, and provides electrical insulation between the electrically conductive layers. The first electrically nonconductive material has a first degree of fragility and a first dielectric constant. A second electrically nonconductive material is disposed in a pattern within the first electrically nonconductive material and between the electrically conductive layers, and provides structural support for the first electrically nonconductive material between the electrically conductive layers. The second electrically nonconductive material has a second degree of fragility that is less than the first degree of fragility and a second dielectric constant that is greater than the first dielectric constant.
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Chia Chok J.
Lau Tauman T.
Low Qwai H.
Ranganathan Ramaswamy
Jackson Jerome
LSI Logic Corporation
Luedeka Neely & Graham P.C.
Richards N. Drew
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