Dielectric stack

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S758000

Reexamination Certificate

active

06963138

ABSTRACT:
An integrated circuit with a pressure resistant current carrying structure having electrically conductive layers for carrying current. A first electrically nonconductive material at least partially surrounds the electrically conductive layers, and provides electrical insulation between the electrically conductive layers. The first electrically nonconductive material has a first degree of fragility and a first dielectric constant. A second electrically nonconductive material is disposed in a pattern within the first electrically nonconductive material and between the electrically conductive layers, and provides structural support for the first electrically nonconductive material between the electrically conductive layers. The second electrically nonconductive material has a second degree of fragility that is less than the first degree of fragility and a second dielectric constant that is greater than the first dielectric constant.

REFERENCES:
patent: 5744865 (1998-04-01), Jeng et al.
patent: 5753564 (1998-05-01), Fukada
patent: 5880018 (1999-03-01), Boeck et al.
patent: 6064118 (2000-05-01), Sasaki
patent: 6388331 (2002-05-01), Bond et al.
patent: 6614091 (2003-09-01), Downey et al.
patent: 6625882 (2003-09-01), Saran et al.
patent: 6798035 (2004-09-01), Low et al.

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