Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-01-31
2006-01-31
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S347000, C257S506000, C257S510000
Reexamination Certificate
active
06992363
ABSTRACT:
A dielectric separation type semiconductor device having high voltage withstanding capability includes a primary dielectric layer (3-1) on a first surface of a semiconductor substrate (1), a first conductivity type first semiconductor layer (2) disposed oppositely to the substrate (1) with the primary dielectric layer (3-1) sandwiched, a first conductivity type second semiconductor layer (4) on the first semiconductor layer (2), a second conductivity type third semiconductor layer (5) surrounding peripherally the first semiconductor layer (2), a ring-like insulation film (9) surrounding peripherally the third semiconductor layer (5), a first electrode (6) on the second semiconductor layer (4), a second electrode (7) on the third semiconductor layer (5), a back-surface electrode (8) deposited on a second surface of the substrate (1), and a first auxiliary dielectric layer (3-2) disposed immediately below the second semiconductor layer (4), being junctioned to the second surface.
REFERENCES:
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4860081 (1989-08-01), Cogan
patent: 4963505 (1990-10-01), Fujii et al.
patent: 5294825 (1994-03-01), Nakagawa et al.
patent: 5387555 (1995-02-01), Linn et al.
patent: 5476809 (1995-12-01), Kobayashi
patent: 5554872 (1996-09-01), Baba et al.
patent: 5561077 (1996-10-01), Terashima
patent: 5777365 (1998-07-01), Yamaguchi et al.
patent: 6069396 (2000-05-01), Funaki
patent: 6297532 (2001-10-01), Yamamoto et al.
patent: 6326292 (2001-12-01), Söderbärg et al.
patent: 0 513 764 (1992-11-01), None
patent: 0 615 292 (1994-09-01), None
patent: 5-136436 (1993-06-01), None
patent: 7-245382 (1995-09-01), None
patent: 9-97886 (1997-04-01), None
patent: 9-172189 (1997-06-01), None
patent: 2000-150501 (2000-05-01), None
Patent Abstracts of Japan of 09-172189.
Korean Office Action w/English translation.
Patent Abstracts of Japan 20000150501.
Patent Abstracts of Japan 09097888.
French Preliminary Search Report.
Akiyama Hajime
Yasuda Naoki
Mitsubishi Denki & Kabushiki Kaisha
Nadav Ori
Oblon, Spivak, McClelland & Neustadt, P.C.
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