Oscillators – With distributed parameter resonator – Parallel wire type
Patent
1986-05-20
1987-11-17
Grimm, Siegfried H.
Oscillators
With distributed parameter resonator
Parallel wire type
331117D, 331117FE, H03B 518
Patent
active
047076690
ABSTRACT:
A dielectric resonator microwave oscillator in which the gate of a FET is connected to a resonance circuit. An inductor is connected to the drain of the FET, and the output is taken from the source of the FET. This dielectric resonator microwave oscillator has enhanced negative resistance and positively starts the oscillation even when there is a low reflection coefficient of the resonance circuit. Using a circuit which consists of a capacitor and inductor between the source and the output terminal, a further increasing of negative resistance at the gate of the FET is obtained.
REFERENCES:
patent: 4435688 (1984-03-01), Shinkawa et al.
Mori et al., IEEE International Microwave Symposium Digest, Washington, D.C. May 28-30, 1980, pp. 376-378.
Ishihara et al., IEEE Transactions on Microwave Theory and Techniques, vol. MTT-28, No. 8, Aug. 1980, pp. 817-824.
Tsironis et al., "Stable Monolithic GaAs FET Oscillator," Electronics Letters, vol. 18, No. 8, Apr. 15, 1982, pp. 345-347.
Mekata Tsuyoshi
Saka Hiroshi
Tanaka Toshihide
Grimm Siegfried H.
Matsushita Electric - Industrial Co., Ltd.
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