Dielectric-polysilicon-dielectric antifuse for field programmabl

Details Dielectric-polysilicon-dielectric antifuse for field programmabl Dielectric-polysilicon-dielectric antifuse for field programmabl

1994-08-11

1996-12-03

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, H01L 2702

Patent

active

055811116

ABSTRACT:
A novel antifuse structure includes a novel antifuse material layer comprises a first dielectric layer, a first polysilicon layer (which may optionally be lightly doped) disposed over the first dielectric layer, and a second dielectric layer disposed over the first polysilicon layer. The dielectric layers may be formed of silicon nitride, silicon dioxide, silicon oxynitride and combinations of the foregoing. Additional layers may also be included to form D/P/D/P/D, D/P/D/a-Si/D sandwiches, and the like. The polysilicon layer provides the ability to control the breakdown voltage of the antifuse through control of the doping level while maintaining a relatively large thickness of the antifuse material layer resulting in low capacitance for the antifuse. The antifuse material layer is compatible with high temperature processes (500.degree. C.-950.degree. C.) and may be carried out in the range of 400.degree. C.-950.degree. C. making it compatible with a wide range of processes.

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