Dielectric optical waveguide device

Details Dielectric optical waveguide device Dielectric optical waveguide device

1994-02-02

1995-12-05

Bovernick, Rodney B.

Optical waveguides

Integrated optical circuit

385131, G02B 612

Patent

active

054737117

ABSTRACT:
An insulating buffer layer of SiO.sub.2 is formed on a substrate of LiNbO.sub.3 crystal in which optical waveguides are formed, and a semiconducting film of Si is formed on the buffer layer. An insulating diffusion suppressing layer of SiO.sub.2 is formed on the semiconducting film, and a pair of electrodes of Au are located on the diffusion suppressing layer. The formation of silicide by solid-phase diffusion of the electrodes into the semiconducting film can be prevented by the diffusion suppressing layer.

REFERENCES:
patent: 5119449 (1992-06-01), Komatsu et al.
patent: 5153934 (1992-10-01), Okayama et al.
patent: 5189713 (1993-02-01), Shaw
patent: 5214724 (1993-05-01), Seino et al.
patent: 5285514 (1994-02-01), Nojiri et al.

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