Dielectric optical waveguide device

Details Dielectric optical waveguide device Dielectric optical waveguide device

1995-06-02

1997-01-28

Ngo, John

Optical waveguides

Integrated optical circuit

385131, G02B 612

Patent

active

055984908

ABSTRACT:
An insulating buffer layer of SiO.sub.2 is formed on a substrate of LiNbO.sub.3 crystal in which optical waveguides are formed, and a semiconducting film of Si is formed on the buffer layer. An insulating diffusion suppressing layer of SiO.sub.2 is formed on the semiconducting film, and a pair of electrodes of Au are located on the diffusion suppressing layer. The formation of silicide by solid-phase diffusion of the electrodes into the semiconducting film can be prevented by the diffusion suppressing layer.

REFERENCES:
patent: 5119449 (1992-06-01), Komatsu et al.
patent: 5153934 (1992-10-01), Okayama et al.
patent: 5189713 (1993-02-01), Shaw
patent: 5214724 (1993-05-01), Seino et al.
patent: 5285514 (1994-02-01), Nojiri et al.
15th European Conference on Optical Communication, Sep. 1989, vol. 1, pp. 421-424.

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