Dielectric materials of amorphous compositions and devices emplo

Details Dielectric materials of amorphous compositions and devices emplo Dielectric materials of amorphous compositions and devices emplo

1997-09-24

1999-06-15

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613214, 501134, H01G 406

Patent

active

059127970

ABSTRACT:
A thin dielectric film that uses an amorphous composition of R--Sn--Ti--O as the main component is disclosed, wherein R is Zr or Hf, having particular application for use in a capacitor of a DRAM cell. The preferable range of the dielectric thin film composition is centered around Zr.sub.x Sn.sub.y Ti.sub.z O.sub.w, where 0.1.ltoreq.x.ltoreq.1.8; 0.1.ltoreq.y.ltoreq.1.6; 0.2.ltoreq.z.ltoreq.1.9; and 2.0.ltoreq.w.ltoreq.4.0; and x+y+z=2. Preferably, x is about 0.2, y is about 0.2, and z is about 0.6. Doping of the composition with nitrogen is further disclosed as improving the dielectric properties and uniformity of the film.

REFERENCES:
patent: 5555219 (1996-09-01), Akiyama et al.
patent: 5610853 (1997-03-01), Akiyama et al.
patent: 5644184 (1997-07-01), Kucherov

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