Dielectric materials for electronic devices

Details Dielectric materials for electronic devices Dielectric materials for electronic devices

2007-01-30

2007-01-30

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S040000, C257S072000, C257S291000, C257S642000, C257SE51005, C257SE51007

Reexamination Certificate

active

10982472

ABSTRACT:
A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.

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Dimitrakopoulos, C.D. and Malenfant, P.R.L., Organic Thin Film Transistors for Large Area Electronics,Adv. Mater., vol. 12, No. 2, pp. 99-117 (2002).

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