Dielectric material compressing Ta.sub.2 O.sub.5 doped with TiO.

Details Dielectric material compressing Ta.sub.2 O.sub.5 doped with TiO. Dielectric material compressing Ta.sub.2 O.sub.5 doped with TiO.

1996-12-16

1999-07-13

Picard, Leo P.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361305, 361311, 361320, 3613211, 361322, 428698, 428426, H01G 406

Patent

active

059235241

ABSTRACT:
Applicant has discovered that the dielectric constant of Ta.sub.2 O.sub.5 can be significantly enhanced by the addition of small quantities of TiO.sub.2. Specifically, if Ta.sub.2 O.sub.5 is doped with more than about 3 mole percent of TiO.sub.2 the doped material will have a dielectric constant higher than the undoped material. For example, at a ratio of 0.92 Ta.sub.2 O.sub.5 :0.08TiO.sub.2, the dielectric constant is enhanced by a factor of more than three. Because both Ta and Ti are compatible with current microelectronics processing, the new dielectric can be used to make capacitors of reduced size with but minor modifications of conventional processes.

REFERENCES:
patent: 4734340 (1988-03-01), Saito et al.
Umezawa et al. "Thin Electrical Properties of Resistive and Dielectric Thin Films Prepared by Reactive Sputtering from a Tantalum-Titanium Composite Target"., Thin Solid Films 52 (1978) 69-75, 1978.
Fujikawa et al., "Effects of Additive Elements on Elec Prop of Tantalum Oxide Films", Journal of Applied Physics, 75 (5), pp. 2538-2544, Mar. 1994 .

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