Dielectric layers in multilayer refractory metallization structu

Details Dielectric layers in multilayer refractory metallization structu Dielectric layers in multilayer refractory metallization structu

1984-01-17

1986-04-15

Lesmes, George F.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428210, 428901, 428701, 428427, 428428, B32B 300, B32B 700, B32B 1500, B32B 1300

Patent

active

045827451

ABSTRACT:
Multilevel metallization structures in semiconductor devices are improved by utilizing a two- or three-layer dielectric system wherein the dielectric layers differ in flow temperature by at least 50.degree. and preferably 100.degree. C., so that one layer may be flowed without reflow or mutual dissolution with an underlying contacting dielectric layer. The first dielectric layer is phosphosilicate glass and the second is borophosphosilicate glass. A third layer is also borophosphosilicate glass differing in composition from the second so as to provide the required flow temperature differential.

REFERENCES:
patent: 3475210 (1969-10-01), Lehrer
patent: 4110487 (1978-08-01), Rion
patent: 4349584 (1982-09-01), Flatley et al.
patent: 4363830 (1982-12-01), Hsu et al.
patent: 4369220 (1983-01-01), Probhu et al.
patent: 4424251 (1984-01-01), Sugishita et al.
Kern et al., RCA Review, vol. 43, Sep. 1982, pp. 423-457.
Barr et al., Scientific and Industrial Glass Blowing and Laboratory Techniques, Instruments Publishing Co., 1949, pp. 20-22.

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