Dielectric layers and memory cells including metal-doped...

Details Dielectric layers and memory cells including metal-doped... Dielectric layers and memory cells including metal-doped...

2011-03-08

2011-03-08

Group, Karl E (Department: 1731)

Compositions: ceramic

Ceramic compositions

Aluminum compound containing

C501S152000, C501S041000, C428S701000, C428S702000, C257SE21280, C257SE21281

Reexamination Certificate

active

07902099

ABSTRACT:
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.

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