Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2011-06-14
2011-06-14
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S635000, C257SE21576, C438S778000
Reexamination Certificate
active
07960826
ABSTRACT:
A dielectric layer structure includes an interlayer dielectric (ILD) layer covering at least a metal interconnect structure and a single tensile hydrophobic film. The ILD layer further includes a low-k dielectric layer, and the single tensile hydrophobic film is positioned on the low-k dielectric layer for counteracting at least a part of a stress of the low-k dielectric layer.
REFERENCES:
patent: 5366929 (1994-11-01), Cleeves
patent: 5387546 (1995-02-01), Maeda et al.
patent: 6010943 (2000-01-01), Liao
patent: 6015759 (2000-01-01), Khan et al.
patent: 6020024 (2000-02-01), Maiti
patent: 6121164 (2000-09-01), Yieh et al.
patent: 6208014 (2001-03-01), Wu et al.
patent: 6294473 (2001-09-01), Oliver
patent: 6297532 (2001-10-01), Yamamoto
patent: 6548901 (2003-04-01), Cote
patent: 7071708 (2006-07-01), Chou et al.
patent: 7381451 (2008-06-01), Lang
patent: 7892648 (2011-02-01), Edelstein et al.
patent: 2005/0106762 (2005-05-01), Chakrapani et al.
patent: 2005/0227488 (2005-10-01), O'Brien et al.
patent: 2006/0043591 (2006-03-01), Yim
patent: 2006/0146099 (2006-07-01), Wang et al.
patent: 2006/0170836 (2006-08-01), Kondo et al.
patent: 2007/0105297 (2007-05-01), Jeong
patent: 2007/0114667 (2007-05-01), Bhatt
patent: 2007/0281497 (2007-12-01), Liu
patent: 2008/0020570 (2008-01-01), Naik
patent: 2008/0122045 (2008-05-01), Yang
patent: 2008/0197513 (2008-08-01), Restaino
patent: 2009/0179003 (2009-07-01), Nishimura
patent: 2010/0122711 (2010-05-01), Ryan
patent: I281223 (2007-05-01), None
patent: I282128 (2007-06-01), None
Wang et al. “Dielectric Properties and Frequency Response of Self-Assembled Monolayers of Alkanethiols”, Langmuir, 2004: pp. 5007-5012.
Kohl et al. “Low k, Porous Methyl Silsesquioxane and Spin-On-Glass.” Electrochemical and Solid-State Letters vol. 2 (1999): p. 77-79.
Fan Michele
Hsu Winston
Margo Scott
Smith Matthew
United Microelectronics Corp.
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