Dielectric layer and thin film transistor

Details Dielectric layer and thin film transistor Dielectric layer and thin film transistor

2011-03-08

2011-03-08

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S649000, C257S059000, C257S072000, C257SE21293, C257SE29273

Reexamination Certificate

active

07902640

ABSTRACT:
A dielectric layer including a film with silicon compound contain oxygen and a film with silicon compound contain nitrogen is provided. A ratio of Si—N group absorption intensity to a thickness of the film with silicon compound contain nitrogen in an FTIR spectrum is substantially greater than or substantially equal to 0.67/μm. The dielectric layer can be incorporated in switch devices.

REFERENCES:
patent: 5272360 (1993-12-01), Todoroki et al.
patent: 6291255 (2001-09-01), Huang et al.
patent: 6372672 (2002-04-01), Kim et al.
patent: 6573172 (2003-06-01), En et al.
patent: 6887745 (2005-05-01), Chen et al.
patent: 6900853 (2005-05-01), Watanabe et al.
patent: 7019352 (2006-03-01), Udayakumar et al.
patent: 7019385 (2006-03-01), Zhang et al.
patent: 2001/0028099 (2001-10-01), Sato
patent: 2008/0241355 (2008-10-01), Won et al.
patent: 1458694 (2003-11-01), None
patent: 2000321095 (2000-11-01), None
patent: 2003142496 (2003-05-01), None
patent: 2006049535 (2006-02-01), None
patent: 332320 (1998-05-01), None
patent: 381122 (2000-02-01), None
patent: 487978 (2002-05-01), None
patent: 513799 (2002-12-01), None
patent: 556033 (2003-10-01), None
patent: 200525638 (2005-08-01), None
patent: 1241863 (2005-10-01), None
patent: 1251876 (2006-03-01), None

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