Dielectric isolation type semiconductor device and method...

Details Dielectric isolation type semiconductor device and method... Dielectric isolation type semiconductor device and method...

2006-10-24

2006-10-24

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S353000

Reexamination Certificate

active

07125780

ABSTRACT:
A dielectric isolation type semiconductor device and a manufacturing method therefor achieve high dielectric resistance while preventing the dielectric strength of the semiconductor device from being limited depending on the thickness of a dielectric layer and the thickness of a first semiconductor layer. A semiconductor substrate (1) and an n−type semiconductor layer (2) are bonded to each other through a buried oxide film layer (3). A first porous oxide film area (10) is formed in the semiconductor substrate in a state contacting with the buried oxide film layer. A power device is formed on the n−type semiconductor layer. The first porous oxide film area is formed in an area including a location right under a first main electrode (6) and extending from the first main electrode side up to a range of more than 40% of a distance (L) between the first and second main electrodes (6, 7).

REFERENCES:
patent: 5485030 (1996-01-01), Terashima
patent: 6096582 (2000-08-01), Inoue et al.
patent: 6249026 (2001-06-01), Matsumoto et al.
patent: 2004/0119132 (2004-06-01), Akiyama et al.
patent: 4326846 (1994-04-01), None
patent: 1239522 (2002-09-01), None
patent: 6-216113 (1994-08-01), None
patent: 9-45762 (1997-02-01), None
patent: 3435930 (2003-08-01), None
Kazuo Imai, “A New Dielectric Isolation Method using Proous Silicon”, Solid-State Electronics, vol. 24, 1981, pp. 159-164.
Patent Abstracts of Japan, JP 9-097832, Apr. 8, 1997.

Affiliated with

Also associated with

Rating

Dielectric isolation type semiconductor device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric isolation type semiconductor device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric isolation type semiconductor device and method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3705472