Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-11-14
2006-11-14
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S347000
Reexamination Certificate
active
07135752
ABSTRACT:
A dielectric isolation type semiconductor device and a manufacturing method therefor achieve high dielectric resistance while preventing the dielectric strength of the semiconductor device from being limited depending on the thickness of a dielectric layer and the thickness of a first semiconductor layer. A semiconductor substrate (1) and an n−type semiconductor layer (2) are bonded to each other through a buried oxide film layer (3). A first porous oxide film area (10) is formed in the semiconductor substrate in a state contacting with the buried oxide film layer. A power device is formed on the n−type semiconductor layer. The first porous oxide film area is formed in an area including a location right under a first main electrode (6) and extending from the first main electrode side up to a range of more than 40% of a distance (L) between the first and second main electrodes (6, 7).
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Akiyama Hajime
Izuo Shinichi
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Cuong
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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