Dielectric isolation type semiconductor device and...

Details Dielectric isolation type semiconductor device and... Dielectric isolation type semiconductor device and...

2006-04-21

2009-02-03

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S347000, C257S506000, C257S510000, C438S353000, C438S359000

Reexamination Certificate

active

07485943

ABSTRACT:
A dielectric isolation type semiconductor device includes a dielectric isolation type substrate in which a support substrate, an embedded dielectric layer, and a first conductive type semiconductor substrate of a low impurity concentration are laminated one over another. The semiconductor substrate includes a first semiconductor region of a first conductive type having a high impurity concentration, a second semiconductor region of a second conductive type having a high impurity concentration arranged so as to surround the first semiconductor region, a first main electrode joined to a surface of the first semiconductor region, and a second main electrode joined to a surface of the second semiconductor region. A first dielectric portion is arranged adjacent the embedded dielectric layer so as to surround a region of the support substrate superposed on the first semiconductor region in a direction of lamination thereof, and a wire connected with the first main electrode.

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Kazuo Imai, “A New Dielectric Isolation Method Using Porous Silicon”, Solid-State Electronics, vol. 24, 1988, pp. 159-161 and 163-164.

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