Dielectric isolation type semiconductor device

Details Dielectric isolation type semiconductor device Dielectric isolation type semiconductor device

2005-04-13

2008-08-26

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

C257S501000, C257SE29020

Reexamination Certificate

active

07417296

ABSTRACT:
A dielectric isolation type semiconductor device can achieve high dielectric resistance while preventing the dielectric strength thereof from being limited depending on the thickness of a dielectric layer and the thickness of a first semiconductor layer. A drift N−region is bonded to a semiconductor substrate through a buried oxide film to from a high withstand-voltage device in the drift N−region. A first field plate is formed on the drift N−region in the vicinity of a drain electrode. A first high silicon concentration region composed of a buried N+region is formed in a porous oxide film region forming a part of the buried oxide film at a location right under the drain electrode. The drain electrode and the first field plate are electrically connected to the first high silicon concentration region through a drain N−well region.

REFERENCES:
patent: 5485030 (1996-01-01), Terashima
patent: 6025237 (2000-02-01), Choi
patent: 6049110 (2000-04-01), Koh
patent: 2004/0119132 (2004-06-01), Akiyama et al.
patent: 43 26 846 (1994-04-01), None
patent: 692 32 679 (2003-03-01), None
patent: 0 497 577 (1992-08-01), None
patent: 6-216113 (1994-08-01), None
patent: 9-45762 (1997-02-01), None
patent: 3435930 (2003-08-01), None
Kazuo Imai, “A New Dielectric Isolation Method Using Porous Silicon”, Solid State Electronics, 1981, pp. 159-164, vol. 24, Pergamon Press Ltd., Great Britain.
French Office Action dated Feb. 19, 2007.

Affiliated with

Also associated with

Rating

Dielectric isolation type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric isolation type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric isolation type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3998333