Dielectric isolation substrate having single-crystal silicon isl

Details Dielectric isolation substrate having single-crystal silicon isl Dielectric isolation substrate having single-crystal silicon isl

1992-11-27

1995-02-07

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257524, 257776, H01L 2904, H01L 2906

Patent

active

053878175

ABSTRACT:
Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating regions for surrounding said element forming regions, and a supporter region extending between the isolation insulating regions. The lower metallization is formed on the supporter region and the upper metallization is formed to extend from one element forming region to another element forming regions while striding over the lower metallization not to cross the region where the lower metallization adjoins the isolation insulating regions. The lower metallization may be formed from one element forming region to another element forming regions while the upper metallization is formed to stride over the lower metallization.

REFERENCES:
patent: 4332075 (1982-06-01), Ota et al.
patent: 4926234 (1990-05-01), Katoh
patent: 5057895 (1991-10-01), Beasom

Affiliated with

Also associated with

Rating

Dielectric isolation substrate having single-crystal silicon isl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric isolation substrate having single-crystal silicon isl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric isolation substrate having single-crystal silicon isl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1112477