Dielectric isolation substrate

Details Dielectric isolation substrate Dielectric isolation substrate

1992-03-06

1992-09-29

Wojciechowicz, Edward J.

357 49, 357 50, 357 55, H01L 2702

Patent

active

051517680

ABSTRACT:
A dielectric isolation substrate includes island-like regions made of a single crystal of semiconductor material and a supporting layer for supporting the island-like regions. The support layer is formed by first and second electrodes made of a conductive material and a dielectric film interposed therebetween to constitute a capacitor structure. The first electrode layer has a plurality of island-like regions on a principal surface side thereof remote from the dielectric film. The first electrode layer may be formed as one region for forming one capacitor or isolated two or more regions for forming two or more capacitors.

REFERENCES:
patent: 4063271 (1977-12-01), Bean
patent: 4238762 (1980-12-01), McWilliams et al.
patent: 4866501 (1989-09-01), Shanefield
Japanese Laid-open Patent Application No. 294848/86, dated Dec. 25, 1986.

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