Dielectric isolation for SOI island side wall for reducing leaka

Details Dielectric isolation for SOI island side wall for reducing leaka Dielectric isolation for SOI island side wall for reducing leaka

1988-11-21

1991-07-23

Hille, Rolf

357 54, 357 4, 357 52, H01L 2701, H01L 2934, H01L 2712

Patent

active

050347896

ABSTRACT:
The conducting layer, such as polysilicon, which electrically connects spaced apart semiconductor islands of a semiconductor-on-insulator, such as sapphire, integrated circuit device is further spaced from the base, sides and upper edges of the islands (identified as sites for origination of undesirable leakage currents during operation) by an underlying insulating layer which may include silicon oxide with a dopant such as phosphorus or boron. During processing, the islands provide a self-masking effect when illumination is first passed through the sapphire substrate to expose photoresist. Refraction of the illumination around the upper edges of the islands provides a convenient way to form the insulating layer so that it lips over the edges and slightly onto the top of the islands.

REFERENCES:
patent: 3710205 (1973-01-01), Swanson
patent: 4169746 (1979-10-01), Ipri et al.
patent: 4680603 (1987-07-01), Wei et al.
patent: 4751554 (1988-06-01), Schnabe et al.
patent: 4849805 (1989-07-01), Herbert et al.

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