Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1995-10-26
1997-01-07
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257526, 257487, H01L 2900, H01L 2358
Patent
active
055920152
ABSTRACT:
A semiconductor device is provided which makes a high withstand voltage bipolar transistor small and prevents deterioration in a switching speed of the transistor. A silicon oxide layer is formed on a silicon substrate, and a semiconductor island of one conductivity type which is isolated laterally by an isolation trench is formed on the silicon oxide layer. A silicon oxide film is formed on an outer periphery portion of the semiconductor island to bury the trench. In the semiconductor island, a bipolar transistor, namely a base region of the other conductivity type, is formed, and in the base region an emitter region of one conductivity type is formed and a collector region of one conductivity type is further formed. In the semiconductor island a diffusion region of the other conductivity type for extracting excessive carriers to which a constant electric potential is applied is further formed.
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Iida Makio
Miura Shoji
Sakakibara Toshio
Shibata Tadashi
Sugisaka Takayuki
Fahmy Wael
Nippondenso Co. Ltd.
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