Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With polycrystalline semiconductor isolation region in...
Patent
1992-10-19
1993-08-03
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With polycrystalline semiconductor isolation region in...
257507, 257520, 257524, 257499, H01L 2712
Patent
active
052332160
ABSTRACT:
A dielectric isolated substrate wherein a connecting polycrystalline silicon layer has smooth and flat surface on which a single crystal support is bonded and has a densified crystal structure, or is obtained by further heat treatment at 800.degree. C. or higher after deposition, or has no orientation as to growth direction of polycrystalline silicon, or a buffering layer is formed between a polycrystalline silicon layer and a single crystal support, is excellent in bonding between the single crystal support and the polycrystalline silicon layer by preventing voids at the bonded surface, while enhancing reliability.
REFERENCES:
patent: 4984052 (1991-01-01), Koshino et al.
Suzuki et al.-vol. 124-No. 11, pp. 1776-1780, 1977 Journal of Electrochemical Society.
Inoue Yohsuke
Mochizuki Yasuhiro
Ogawa Saburoo
Ohue Michio
Tanaka Takeshi
Hitachi , Ltd.
Wojciechowicz Edward
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