Dielectric isolated high voltage semiconductor device

Details Dielectric isolated high voltage semiconductor device Dielectric isolated high voltage semiconductor device

1993-11-05

1995-10-31

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257506, 257507, H01L 2712

Patent

active

054632439

ABSTRACT:
A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor supporter by applying the same reverse biasing voltage to the supporter and the islands. That is, in the structure, an electrode is provided at the back surface of the supporter and connected to a main electrode of the selected island. The above-mentioned main junction is the pn junction to which the reverse biasing voltage for securing the withstand voltage of the semiconductor device is applied.

REFERENCES:
patent: 4242697 (1980-12-01), Berthold et al.
patent: 5040043 (1991-08-01), Ohno et al.

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