Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-07-15
1998-05-05
Ngo, Ngann V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257349, H01L 2976, H01L 31036, H01L 31112
Patent
active
057478295
ABSTRACT:
A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor supporter by applying the same reverse biasing voltage to the supporter and the islands. That is, in the structure, an electrode is provided at the back surface of the supporter and connected to a main electrode of the selected island. The above-mentioned main junction is the pn junction to which the reverse biasing voltage for securing the withstand voltage of the semiconductor device is applied.
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patent: 4287526 (1981-09-01), Sakuma
patent: 5040043 (1991-08-01), Ohno et al.
Patent Abstracts of Japan, vol. 012, No. 320.
Patent Abstracts of Japan, vol. 009, No. 240.
Sakurai Naoki
Sugawara Yoshitaka
Hitachi , Ltd.
Ngo Ngann V.
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