Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-05-03
2005-05-03
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S501000, C257S513000, C257S522000, C257S524000
Reexamination Certificate
active
06888213
ABSTRACT:
A dielectric insulation structure is formed in a silicon layer by integrating a dielectric trench structure therein. The dielectric trench structure defines an insulation well where semiconductor devices are to be integrated therein. The dielectric trench structure is on a hollow region that is completely surrounded by a dielectric area. The dielectric area also forms the side insulation of the dielectric trench structure. The dielectric trench structure is interrupted by a plurality of points to define a plurality of side support regions for the insulation well.
REFERENCES:
patent: 5227658 (1993-07-01), Beyer et al.
patent: 6191467 (2001-02-01), Park et al.
Arena Giuseppe
Leonardi Salvatore
Modica Roberto
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jackson Jerome
Jorgenson Lisa K.
STMicroelectronics S.r.l.
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